METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO SIMPLIFY MANUFACTURING PROCESS

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to simplify manufacturing process by forming simultaneously an insulating spacer and a passivation layer at cell and peripheral regions, respectively. CONSTITUTION: Gate electrodes(204,204-1) are formed on a cell region(III) and a peripheral region(IV) of a substrate(200). A source/drain region(210-1) is formed in the substrate of the peripheral region. An insulating spacer(208) is formed at both sidewalls of the gate electrode of the cell region and a passivation layer(212-1) is simultaneously formed on the resultant structure of the peripheral region. By implanting dopants into the substrate of the cell region, a source/drain region(210) including an LDD(Lightly Doped Drain)(L-2) is formed. A salicide layer(220) is formed on the substrate and the gate electrode of the cell region.