METHOD FOR MANUFACTURING CAPACITOR

摘要

PURPOSE: A method for manufacturing a capacitor is provided to conserve the concentration of implanted phosphor ions in a polysilicon layer by forming a sacrificial layer on the polysilicon layer and carrying out a heat treatment. CONSTITUTION: A conductive layer is deposited on a semiconductor substrate(100). A sacrificial layer is deposited on the conductive layer(102). A heat treatment is carried out on the resultant structure(104). A lower electrode and a sacrificial pattern are formed by selectively patterning the sacrificial layer and the conductive layer(106). The sacrificial pattern is removed from the resultant structure(108). A dielectric layer and an upper electrode are sequentially formed on the lower electrode. Preferably, the conductive layer is made of a phosphor implanted polysilicon layer.