发明名称 |
Magnetic memory device having soft reference layer |
摘要 |
A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.
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申请公布号 |
US6750491(B2) |
申请公布日期 |
2004.06.15 |
申请号 |
US20010029694 |
申请日期 |
2001.12.20 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
SHARMA MANISH;ANTHONY THOMAS C.;TRAN LUNG |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):H01L29/76 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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