发明名称 Abatement of effluents from chemical vapor deposition processes using organometallic source reagents
摘要 A method and apparatus for abatement of effluent from a CVD process using a source reagent having a metal organic loosely bound to a organic or organometallic molecule such that upon exposure to heat such bond is readily cleavable, e.g., copper deposition process involving the formation of films on a substrate by metalorganic chemical vapor deposition (CVD) utilizing a precursor composition for such film formation. The abatement process in specific embodiments facilitates high efficiency abatement of effluents from copper deposition processes utilizing Cu(hfac)TMVS as a copper source reagent.
申请公布号 US6749671(B2) 申请公布日期 2004.06.15
申请号 US20030358972 申请日期 2003.02.05
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 HOLST MARK;DUBOIS RAY;ARNO JOSE;FALLER REBECCA;TOM GLENN
分类号 B01D53/64;B01D53/04;B01J20/08;B01J20/10;B01J20/20;B01J20/34;C23C16/18;C23C16/44;(IPC1-7):B01D53/04 主分类号 B01D53/64
代理机构 代理人
主权项
地址