发明名称 |
Abatement of effluents from chemical vapor deposition processes using organometallic source reagents |
摘要 |
A method and apparatus for abatement of effluent from a CVD process using a source reagent having a metal organic loosely bound to a organic or organometallic molecule such that upon exposure to heat such bond is readily cleavable, e.g., copper deposition process involving the formation of films on a substrate by metalorganic chemical vapor deposition (CVD) utilizing a precursor composition for such film formation. The abatement process in specific embodiments facilitates high efficiency abatement of effluents from copper deposition processes utilizing Cu(hfac)TMVS as a copper source reagent.
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申请公布号 |
US6749671(B2) |
申请公布日期 |
2004.06.15 |
申请号 |
US20030358972 |
申请日期 |
2003.02.05 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
HOLST MARK;DUBOIS RAY;ARNO JOSE;FALLER REBECCA;TOM GLENN |
分类号 |
B01D53/64;B01D53/04;B01J20/08;B01J20/10;B01J20/20;B01J20/34;C23C16/18;C23C16/44;(IPC1-7):B01D53/04 |
主分类号 |
B01D53/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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