发明名称 |
Selective ball-limiting metallurgy etching processes for fabrication of electroplated tin bumps |
摘要 |
A ball-limiting metallurgy stack is disclosed for an electrical device that contains at least one copper layer disposed upon a titanium adhesion metal layer. The ball-limiting metallurgy stack resists tin migration toward the upper metallization of the device. An etch process flow is also disclosed which resists the redepostion of the tin during etching of a copper layer.
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申请公布号 |
US6750133(B2) |
申请公布日期 |
2004.06.15 |
申请号 |
US20020279478 |
申请日期 |
2002.10.24 |
申请人 |
INTEL CORPORATION |
发明人 |
DATTA MADHAV |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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