BACKSIDE-ILLUMINATED PHOTODIODE ARRAY, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR DEVICE

摘要

The back illuminated photodiode array 1 comprises a semiconductor substrate 3 made of a first conductive type semiconductor, wherein a plurality of photodiodes are formed at an opposite side to an incident surface of light L to be detected of the semiconductor substrate 3. The opposite side of the semiconductor substrate 3 has a plurality of the recessed portions 4 formed in an array, and second conductive type semiconductor regions 5 composed of second conductive type semiconductor is formed at bottoms 4a of a plurality of the recessed portions 4 to form photodiodes arranged in an array.