| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for processing a semiconductor capable of forming a homogeneous thin film of constant film thickness on a base material by controlling guiding-in condition to the base material and its condition including its temperature when forming the thin film. SOLUTION: When forming the thin film, a condition detecting means 27 detects the guide-in condition to a substrate 21 to be processed and the substrate condition including the temperature of the substrate 21. A film thickness detecting means 28 detects thickness of the thin film. Based on the detection results, a condition adjusting means 26 is controlled by a control means 29 for a substrate condition in which a thin film of desired thickness is obtained. Since a desired substrate condition is obtained by adjusting, a homogeneous thin film of constant thickness is formed on the substrate 21 to be processed. COPYRIGHT: (C)2004,JPO
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