发明名称 MOS-GATED CIRCUIT WITH ADAPTIVE DEAD TIME
摘要 PROBLEM TO BE SOLVED: To provide a MOS-gated driver circuit capable of coping with disadvantage of a driver circuit of a conventional technology. SOLUTION: A MOS-gated circuit 400 is provided with a bridge leg 410 having first and second gated switches 415, 420 mutually serially and electrically coupled, and a driver circuit 405 for controlling the conductive states of the gated switches 415, 420. Output signals 425, 430 of the driver circuit 405 are controlled based upon upper and lower control inputs 426, 431 to respectively control the conductive states of the gated switches 415, 420. In order to prevent the simultaneous conduction of the gated switches 415, 420, the driver circuit 405 is provided with first and second conductivity detection circuits 435, 440 respectively assigned to the gated switches 415, 420. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004166207(A) 申请公布日期 2004.06.10
申请号 JP20030162917 申请日期 2003.06.06
申请人 INTERNATL RECTIFIER CORP 发明人 NADD BRUNO C
分类号 H01L21/822;H01L27/04;H01L29/78;H02M1/00;H02M1/088;H02M1/38;H03K17/082;H03K17/16;H03K17/687;(IPC1-7):H03K17/16 主分类号 H01L21/822
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