NOVEL RESIN AND PHOTORESIST COMPOSITION CONTAINING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a high-performance positive or negative resist composition effective in formation of high-resolution sub-half micron and sub-quarter micron patterns.

SOLUTION: The novel resin contains a carbon cyclic aryl unit having a condensed aromatic ring having a hetero substituent such as a mercapto or oxy group and a (meth)acrylic acid monomer unit having an acid-leaving protecting group. The photoresist contains the above resin. The particularly preferred photoresist comprises a resin which is to deblocked by an acid and which contains a hydroxyl naphthyl unit such as vinylnaphthol, and it can effectively form an image by using radiation at ≤200 nm wavelengths such as 193 nm radiation.

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