| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element adopting L-shaped spacers. SOLUTION: A gate pattern is formed on a transistor part of a semiconductor substrate, which is divided into the transistor part and a resistor part. A removal spacer is formed on an insulating film of both sidewalls of the gate pattern. Deep source/drain regions are formed on the semiconductor substrate, aligned to the removal spacer of the transistor part and to the semiconductor substrate of the resistor part. After sequentially the removal spacer and the insulating film are removed, shallow source/drain regions are formed on the semiconductor substrate on both sides of the gate pattern adjoining the deep source/drain regions of the transistor part. A silicide formation preventing film pattern is simultaneously formed on the resistor part, while the L-shaped spacer is formed on both sidewalls of the gate pattern of the transistor part. A metal silicide is formed on the upper surface of a gate electrode, the deep source/drain regions of the transistor part and the resistor part. COPYRIGHT: (C)2004,JPO
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