发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMISSION INDICATOR AND MANUFACTURING METHOD OF THEM
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device and a light emission indicator, which do not require any external power supply and which are operated with a small power consumption even when the external power supply is employed. <P>SOLUTION: A piezoelectric semiconductor thin film crystalline layer 3 is formed on a substrate 1, and a light emitting layer 4 having a multiple quantum well structure is formed on one part of the surface of the layer 3. Then the piezoelectric semiconductor thin film crystalline layer 3 is further formed across the whole surface of the light emitting layer 4 and the piezoelectric semiconductor thin film crystalline layer 3, on which the light emitting layer 4 is not formed. A semiconductor light emitting device 10 having a structure wherein the light emitting layer 4 is embedded into the piezoelectric semiconductor thin film crystalline 3 is obtained. In the light emitting device 10, when a pressure is impressed on the surface of the piezoelectric semiconductor thin film crystalline layer 3 in the direction of thickness of the same, positive and negative carriers are generated by piezoelectric effect while they are combined in the light emitting layer whereby light is emitted. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004165267(A) 申请公布日期 2004.06.10
申请号 JP20020326742 申请日期 2002.11.11
申请人 SHARP CORP;KAWASAKI MASASHI 发明人 SAITO HAJIME;KAWASAKI MASASHI
分类号 H01L33/06;H01L33/28;H01L33/32;H01S5/343;H01S5/347 主分类号 H01L33/06
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