| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implanter capable of reducing labor, time and a manufacturing cost for processing wafers having different sizes without causing damage to the outside peripheral part of each wafer during processing. SOLUTION: In a device used for implanting ions into a substrate mounted on a substrate receiver by introducing an ion source gas into a vacuum chamber evacuated into predetermined pressure to use an ion beam emitted from a beam radiation port in order to accomplish the purpose, this ion implanter is installed in a space part between the beam radiation port and the substrate receiver, and characterized by that ions are implanted by holding the substrate by a substrate guide ring of a light-metal ring-like holder attachable to and detachable from the device and a substrate holder ring. COPYRIGHT: (C)2004,JPO
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