| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to prevent the damage of an Al layer and restrain the resistance increase of a metal line by forming a TiN layer containing a lot of nitrogen on a Ti layer. CONSTITUTION: An insulating layer(12) with a contact hole is formed on a semiconductor substrate(11). A Ti and TiN layer(15,16) are sequentially formed on the resultant structure by nitridizing a Ti target using N2 gas. The TiN layer contains more nitrogen than the Ti layer. An Al layer(17) for a metal line and an anti-reflective coating(18) are formed on the TiN layer. The Ti and TiN layer are formed by carrying out a PVD(Physical Vapor Deposition) process. The anti-reflective coating is made of Ti/TiN layer.
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