METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of preventing the reduction of capacitance and improving leakage current. CONSTITUTION: A lower electrode(21) made of polysilicon is formed on a semiconductor substrate(20). The lower electrode(21) is then cleaned using HF and NH4OH. Nitridation processing of the lower electrode is performed by using NH3 annealing. A nitride layer(22) is deposited on the lower electrode. A dielectric film(23) and an upper electrode(24) are then sequentially formed on the nitride layer(22).