COMPOSITION FOR THIN FILM CAPACITIVE ELEMENT, HIGH DIELECTRIC CONSTANT INSULATION FILM, THIN FILM CAPACITIVE ELEMENT, THIN FILM MULTILAYER CAPACITOR, ELECTRIC CIRCUIT, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a composition for a thin film capacitive element, having superior leakage property, improved breakdown voltage and superior surface smoothness, in which temperature coefficient of a dielectric thin film, etc. is controlled at will, especially temperature characteristic of dielectric constant is superior, and further, relatively high dielectric constant and low loss are given even when it is made thinner, and to provide a thin film capacitive element using it.

SOLUTION: A first bismuth layer compound which has a positive temperature property, whose relative permittivity rises together with rising of a temperature, within at least a part of temperature range in a specified temperature range, and a second bismuth layer compound which has a negative temperature property, whose relative permittivity lowers together with rising of a temperature, within at least a part of temperature range in the specified temperature range, are contained at an arbitrary mixture ratio. In concrete terms, the bismuth layer compound is shown in the composition formula: CaxSr(1-x)Bi4Ti4O15.

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