| 摘要 |
Methods for forming capacitors of semiconductor devices are disclosed, and more particularly, methods for forming capacitors which comprises a contact plug, a diffusion barrier film, a lower electrode formed of ruthenium, a dielectric film formed of high dielectric constant material and an upper electrode are disclosed, wherein the diffusion barrier film having strong chemical bond, amorphous structure without rapid diffusion path of oxygen and low electrical resistance prevents diffusion of oxygen atoms during a deposition process and thermal treatment of the dielectric film to improve operation of the capacitor and reliability of the device.
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