| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method capable of reducing a difference of level for a thin film transistor matrix substrate and its manufacturing method. SOLUTION: The etching method includes a process to form a layer of Al or Al alloy on a surface of a substrate, a process to treat the surface of the layer of Al or Al alloy with TMAH, a process to form a resist pattern on the surface of the Al or Al alloy layer treated with TMAH, and a process to wet-etch the Al or Al alloy layer with the resist pattern as an etching mask. COPYRIGHT: (C)2004,JPO |
