| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to form a physically thick isolating layer and form an electrically thin isolating layer by depositing and annealing an oxide layer and a nitride layer. CONSTITUTION: A semiconductor substrate(10) with an oxide layer(12) is loaded into a deposition chamber. The temperature of the deposition chamber is changed to the first point. A nitride layer(14) is deposited on the entire surface of the oxide layer. The temperature of the deposition chamber is changed to the second point. An annealing process is carried out on the resultant structure for enhancing the adhesive force between the oxide layer and the nitride layer and removing hydrogen ions from the nitride layer. The resultant structure is unloaded from the deposition chamber. The first point is 650-850 °C and the nitride layer has a thickness of 30-120 angstrom. The second point is 800-1100 °C.
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