发明名称 MOLDING RESIN SEALED POWER SEMICONDUCTOR DEVICE AND ITS PRODUCING PROCESS
摘要 <P>PROBLEM TO BE SOLVED: To enhance handling performance and reliability of an insulating resin layer for a molding resin sealed power semiconductor device. <P>SOLUTION: An insulating sheet is formed of a metal layer 7 and an uncured insulating resin layer 6. The layer 6 contains filler having a scalelike grain shape, for example, exhibits thixotropy and has overall dimensions 6L larger than those of the bottom face 8S of a metal plate. The insulating sheet is placed on the bottom face of the cavity of a die and the metal plate 8 is placed on the upper surface 6US of the resin layer. A power semiconductor chip 2 connected with a frame 1A and further connected with a frame 1B through a wire 4 is mounted on the major surface 8T of that plate. Under that state, the cavity is fully filled with liquid molding resin 5. Thereafter, the insulating resin layer 6 is cured at the same timing as the molding resin 5 thus bonding both members 6 and 8. Interface of both members 6 and 8 is included in the upper surface 6US of the insulating resin layer. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004165281(A) 申请公布日期 2004.06.10
申请号 JP20020327072 申请日期 2002.11.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 NAKAJIMA YASUSHI;TADA KAZUHIRO;KANO TAKETOSHI;HINO YASUNARI
分类号 H01L23/28;H01L21/56;H01L23/29;H01L23/42;H01L23/433;H01L23/495 主分类号 H01L23/28
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