SEMICONDUCTOR DEVICES, WAFER THEREFOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To lower a resistance of a p-type semiconductor layer group in a semiconductor device with a p-type semiconductor layer group and an n-type semiconductor layer group laminated on a predetermined wafer so that the p-type semiconductor layer group is satisfactorily activated for a practical use.

SOLUTION: A group III nitride base layer including at least alminum and having a dislocation density of 1 X 1011/cm2or less with 200 seconds or less of a X-ray rocking curve half-value-width on a (002) surface is formed on a predetermined wafer material. The p-type semiconductor layer group comprising a first group III nitride including at least Ga is formed over the group III nitride base layer. The n-type semiconductor layer group comprising a second group III nitride including at least Ga is formed on the p-type semiconductor layer group after the activated processing of the p-type semiconductor layer group.

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