| 发明名称 |
SINGLE-CRYSTAL SILICON SUBSTRATE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, in which a non-single crystal Si thin film and a single crystal Si thin-film device are formed and a high-performance system is integrated, to provide a method for manufacturing it, and to provide a single-crystal Si substrate for forming the single crystal Si thin-film device of the semiconductor device. SOLUTION: The semiconductor device 20 comprises an SiO<SB>2</SB>film 3; a MOS non-single crystal Si thin film transistor 1a, containing a non-single crystal Si thin film 5' of polycrystalline Si; a MOS single-crystal Si thin-film transistor 16a provided with a single-crystal Si thin-film 14a; and a metal wiring 22 on an insulation substrate 2. COPYRIGHT: (C)2004,JPO |
| 申请公布号 |
JP2004165600(A) |
申请公布日期 |
2004.06.10 |
| 申请号 |
JP20030067109 |
申请日期 |
2003.03.12 |
| 申请人 |
SHARP CORP |
发明人 |
TAKATO YUTAKA;ITOGA TAKASHI |
| 分类号 |
G02F1/1368;H01L21/02;H01L21/265;H01L21/331;H01L21/336;H01L21/8222;H01L21/8234;H01L21/8248;H01L21/8249;H01L27/06;H01L27/08;H01L27/088;H01L27/12;H01L29/732;H01L29/786;(IPC1-7):H01L27/12;G02F1/136;H01L21/824;H01L21/823;H01L21/822 |
主分类号 |
G02F1/1368 |
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