HIGH-DENSITY NROM-FINFET

摘要

The invention relates to a semiconductor memory comprising a plurality of memory cells, each memory cell comprising the following: a first conductively doped contact area (S/D), a second conductively doped contact area (S/D) and a channel region arranged therebetween, which are embodied in a plate-type rib (FIN) made of a semiconductor material and which are arranged successively in the above-mentioned order in the longitudinal direction of the rib (FIN), a memory layer (18) which is embodied in order to program the memory cell and which is arranged on the upper rib side (10) and distanced by means a first insulating layer (20), said memory layer (18) protruding over at least one (12) of the lateral rib surfaces (12) in a normal direction of one lateral rib surface (12), such that said one lateral rib surface (12) and the upper rib surface (10) form an injection edge (16) for injecting charge carriers from the channel region into the memory layer (18); and at least one gate electrode (WL1).