| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition for an ion implantation process which ensures a good profile, a small change in line width at the time of variation in film thickness, and large exposure latitude, and an ion implantation method using the same. <P>SOLUTION: The positive resist composition for an ion implantation process contains (A) a resin having a rate of dissolution in an alkaline developer increased by the action of an acid and (B) a compound which generates an acid upon irradiation with an actinic ray, wherein a resist film formed from the positive resist composition has a transmittance at 193 nm of 30-60%. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
