| 摘要 |
An erasable programmable read only memory includestwo serially connected P-type metal-oxide semiconductor (MOS) transistors,wherein a first P-type MOS transistor acts as selecttransistor, a gate of the first P-type MOS transistor is coupled to select gate voltage, a first node of the firstP-type MOS transistor connected to source linevoltage, a second node of the first P-type MOS transistor connected to a first node of a second P-type MOS transistor, wherein a second node of the second P-type MOS transistor is connected to bit line voltage, wherein a gate of the secondP-type MOS transistor serves as a floating gate, wherein the erasable programmable read only memory does not need to bias a certain voltage on a control gate for programming and thereby injecting hot carriers onto the floating gate, and wherein the erasable programmable read only memory is capped by dielectric materials which are transparent to ultraviolet (UV) light.
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