| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a multilayered gate structure composed of a gate oxide layer, a doped silicon layer, a silicon germanium layer, a tungsten nitride layer, and a tungsten layer which are laminated in this sequence. SOLUTION: A polysilicon layer is doped with bromine. The silicon germanium layer is formed through a separation method or an ion implantation method. Bromine is slowly diffused into the silicon germanium layer in a heating process, so that bromine is hardly diffused into the tungsten nitride layer. Therefore, the contact resistance of the gate structure can be kept at a certain level as desired. COPYRIGHT: (C)2004,JPO
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