发明名称 |
Method of forming copper sulfide for memory cell |
摘要 |
An organic memory cell made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer and passive layer. The controllably conductive media changes its impedance when an external stimuli such as an applied electric field is imposed thereon. Methods of making the organic memory devices/cells, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed. |
申请公布号 |
US6746971(B1) |
申请公布日期 |
2004.06.08 |
申请号 |
US20020314060 |
申请日期 |
2002.12.05 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NGO MINH VAN;LOPATIN SERGEY D.;PANGRLE SUZETTE K.;TRIPSAS NICHOLAS H.;PHAM HIEU T. |
分类号 |
G11C13/02;H01L27/28;H01L51/00;H01L51/30;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
G11C13/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|