发明名称 |
Method to form relaxed sige layer with high ge content |
摘要 |
A method of forming a SiGe layer having a relatively high Ge content includes preparing a silicon substrate; depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the Ge content of the SiGe layer is equal to or greater than 22%, by molecular weight; implanting H+ ions into the SiGe layer at a dose of between about 1.10<16 >cm<-2 >to 5.10<16 >cm<-2>, at an energy of between about 20 keV to 45 keV; thermal annealing the substrate and SiGe layer, to relax the SiGe layer, in an inert atmosphere at a temperature of between about 650° C. to 950° C. for between about 30 seconds and 30 minutes; and depositing a layer of tensile-strained silicon on the relaxed SiGe layer to a thickness of between about 5 nm to 30 nm.
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申请公布号 |
US6746902(B2) |
申请公布日期 |
2004.06.08 |
申请号 |
US20020062319 |
申请日期 |
2002.01.31 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
MAA JER-SHEN;TWEET DOUGLAS JAMES;HSU SHENG TENG |
分类号 |
H01L21/205;H01L21/20;H01L21/265;H01L21/322;(IPC1-7):H01L21/00;H01L21/84 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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