Method of fabricating self-aligned cross-point memory array

摘要

A method of fabricating a self-aligned cross-point memory array includes preparing a substrate, including forming any supporting electronic structures; forming a p-well area on the substrate; implanting ions to form a deep N<+> region; implanting ions to form a shallow P+ region on the N<+> region to form a P+/N junction; depositing a barrier metal layer on the P+ region; depositing a bottom electrode layer on the barrier metal layer; depositing a sacrificial layer or silicon nitride layer on the bottom electrode layer; patterning and etching the structure to remove portions of the sacrificial layer, the bottom electrode layer, the barrier metal layer, the P+ region and the N<+> region to form a trench; depositing oxide to fill the trench; patterning and etching the sacrificial layer; depositing a PCMO layer which is self-aligned with the remaining bottom electrode layer; depositing a top electrode layer, patterning and etching the top electrode layer, and completing the memory array structure.