| 发明名称 |
Semiconductor device |
| 摘要 |
The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.
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| 申请公布号 |
US6747317(B2) |
申请公布日期 |
2004.06.08 |
| 申请号 |
US20020093519 |
申请日期 |
2002.03.11 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
KONDO MASAO;KURIHARA KAZUAKI;MARUYAMA KENJI;YAMAWAKI HIDEKI |
| 分类号 |
B23K26/12;C23C14/28;C30B23/02;C30B23/08;C30B25/18;C30B29/32;H01L21/31;H01L21/314;H01L21/316;H01L21/8246;H01L21/8247;H01L27/105;H01L29/788;H01L29/792;(IPC1-7):H01L27/01 |
主分类号 |
B23K26/12 |
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