SEMICONDUCTOR DEVICE WITH REDUCED GIDL AND SHORT CHANNEL EFFECT TO PREVENT INCREASE OF GATE INDUCED DRAIN LEAKAGE

摘要

PURPOSE: A semiconductor device is provided to prevent the increase of GIDL(Gate Induced Drain Leakage) due to high electric field in the same by recessing both sides of an insulating surface layer and a gate insulating layer and to reduce short channel effect by increasing relative dielectric constant of the gate insulating layer. CONSTITUTION: A channel region(12) is formed within a surface layer of a substrate(1). A source and a drain regions(3,4) are formed at both sides of the channel region. An insulating surface layer(22) with the first relative dielectric constant is formed on the channel region. A gate insulating layer(21) with the second relative dielectric constant is formed on the insulating surface layer. The second relative dielectric constant is larger than the first relative dielectric constant. A gate electrode(5) is formed on the gate insulating layer. Both sides of the insulating surface layer and the gate insulating layer are recessed, so that the width of the gate electrode is larger than those of the insulating surface layer and the gate insulating layer.