| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to increase the surface area of a storage node electrode by forming the storage node electrode like a double crown type structure using an LTO(Low Temperature Oxide) layer. CONSTITUTION: The first doping poly layer and a photoresist pattern are sequentially formed on a semiconductor substrate(100). An LTO layer is formed at both sidewalls of the photoresist pattern. A plug pad(125) is formed by selectively etching the first doping poly layer. The photoresist pattern is then removed. The second doping poly layer is deposited on the entire surface of the resultant structure. A storage node electrode(155) is formed by partially removing the second doping poly layer. The LTO layer is removed by carrying out a wet etching process.
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