| 摘要 |
A semiconductor fabrication reactor according to the invention comprises a rotatable susceptor mounted to the top of a reactor chamber. One or more wafers are mounted to a surface of the susceptor and the rotation of the susceptor causes the wafers to rotate within the chamber. A heater heats the susceptor and a chamber gas inlet allows semiconductor growth gasses into the reactor chamber to deposit semiconductor material on said wafers. A chamber gas outlet is included to allow growth gasses to exit the chamber. In a preferred embodiment, the inlet is at or below the level of said wafers and the outlet is preferably at or above the level of the wafers. A semiconductor fabrication system according to the invention comprises a source of gasses for forming epitaxial layers on wafers and a source of gasses for dopants in said epitaxial layers. A gas line carries the dopant and epitaxial source gasses to a reactor for growing semiconductor devices on wafers, and the source gasses in the gas line are injected into the reactor chamber through a reactor inlet. The reactor comprises an inverted susceptor mounted in a reactor chamber that is capable of rotating. One or more wafers are mounted to a surface of the susceptor, the rotation of the susceptor causing the wafers to rotate within the chamber. A heater heats the susceptor and the source gasses deposit semiconductor material on the wafers.
|
