| 摘要 |
PURPOSE: A NAND type flash EEPROM(Electrically Erasable Programmable Read Only Memory) is provided to improve programming properties by applying one selected from a plurality of different intermediate voltages to an unselected control gate line according to the position of a selected control gate line using a row decoder. CONSTITUTION: A booster circuit(15) is used for generating a programming voltage, a plurality of different intermediate voltages, and a bit line voltage. The programming voltage and the plurality of different intermediate voltages are supplied to a row decoder(13). The row decoder is used for selecting a control gate line and the first to second select gate lines. The first to second select lines are connected with gates of the first and the second select gate transistors, respectively. The bit line voltage is supplied to a bit line control circuit(12). The bit line control circuit is used for latching programmed data and sensing the data at the readout time. The row decoder provides the high voltage selected from different intermediate voltages to an unselected control gate line when a selected control gate line is near to a bit line. The row decoder provides the low voltage selected from different intermediate voltages to the unselected control gate line when the selected control gate line is far from the bit line.
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