发明名称 WIRING STRUCTURE AND FABRICATION METHOD THEREOF AND ELECTROOPTIC DEVICE, ELECTRONIC APPARATUS IMPROVING AN OPENING RATIO OF A PIXEL
摘要 PURPOSE: A wiring structure is provided to form a TFT and a scanning line having a gate electrode film function of the TFT on a substrate, and to deposit a data line thereon while depositing a pixel electrode on top of the data line. CONSTITUTION: A condenser(20C) consists of the first conductive layer(203), an insulating layer(202) formed on the first conductive layer(203), and the second conductive layer(201) formed on the insulating layer(202). A conductive layer(101) is electrically connected to the first conductive layer(203). A relay layer(301) is disposed under the first conductive layer(203) and the conductive layer(101), respectively. The first conductive layer(203) is electrically connected to the conductive layer(101) via the relay layer(301). The condenser(20C), the conductive layer(101), and the relay layer(301) are comprised on a substrate(S).
申请公布号 KR20040047627(A) 申请公布日期 2004.06.05
申请号 KR20030083925 申请日期 2003.11.25
申请人 SEIKO EPSON CORPORATION 发明人 MIYAZAKI TOSHIHIDE;OYAMADA SHIN
分类号 G02F1/1368;G02F1/133;G02F1/1362;G09F9/30;H01L21/768;(IPC1-7):G02F1/133 主分类号 G02F1/1368
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