| 摘要 |
PURPOSE: A thin film transistor substrate for an LCD(Liquid Crystal Display) and a manufacturing method thereof are provided to lower the resistance of a data wire by forming the data wire as a double layer of Cr/Al. CONSTITUTION: Gate wires(123) are formed on an insulation substrate(110). A gate insulation film(140) made of SiNx is formed on the gate wires(123). A semiconductor pattern(150) made of hydrogenated amorphous silicon is formed on the gate insulation film(140). Ohmic contact layer patterns(161,163,165,169) made of an n type impurity such as P are formed on the semiconductor pattern(150). Data wires(171,173,175,179) are formed on the contact layer patterns(161,163,165,169). A source electrode, a data pad portion, drain electrodes(171,173,175,179) and the semiconductor pattern(150) are covered with a passivation film(180). The passivation film(180) has the second and third contact openings(182,183) for exposing a part of the data pad(179) and the drain electrode(175). The openings(182,183) are formed as a step-wall shape. A pixel electrode(190) is formed on the gate insulation film(140) surrounded by the gate line and the data line. |
