METHOD FOR SIMPLIFYING PROCESS FOR FORMING DIELECTRIC LAYER AND FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE AND APPARATUS FOR FORMING SUCH DIELECTRIC LAYER

摘要

PURPOSE: A method for simplifying the process for forming a dielectric layer and fabricating a capacitor of a semiconductor device is provided to simplify the fabricating process and maintain the same electrical characteristic as a conventional process by depositing a dielectric layer while using only a source gas and by performing a curing process only once. CONSTITUTION: The first electrode is formed on a semiconductor substrate(S10). The first dielectric layer is deposited on the first electrode(S20). The first dielectric layer is cured in an oxygen-containing atmosphere(S30). The second dielectric layer is formed on the cured first dielectric layer by using only source gas without using reaction gas(S40). The second electrode is formed on the second dielectric layer without a curing process performed on the second dielectric layer(S50).