发明名称 |
Method and structure of a disposable reversed spacer process for high performance recessed channel CMOS |
摘要 |
A high-performance recessed channel CMOS device including an SOI layer having a recessed channel region and adjoining extension implant regions and optional halo implant regions; and at least one gate region present atop the SOI layer and a method for fabricating the same are provided. The adjoining extension and optional halo implant regions have an abrupt lateral profile and are located beneath said gate region.
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申请公布号 |
US2004104433(A1) |
申请公布日期 |
2004.06.03 |
申请号 |
US20030713971 |
申请日期 |
2003.11.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
IEONG MEIKEI;DOKUMACI OMER H.;KANARSKY THOMAS S.;KU VICTOR |
分类号 |
H01L21/336;H01L29/45;H01L29/49;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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