METHOD FOR FORMING FERROELECTRIC CAPACITOR TO PREVENT FERROELECTRIC CHARACTERISTIC FROM BEING DETERIORATED

摘要

PURPOSE: A method for forming a ferroelectric capacitor is provided to prevent a ferroelectric characteristic from being deteriorated by preventing hydrogen from being introduced to a TiO2 layer as a diffusion barrier layer. CONSTITUTION: A lower electrode is formed on a semiconductor substrate(30). A ferroelectric layer is formed on the lower electrode. A TiO2 layer is formed as the first diffusion barrier layer surrounding the rest of the ferroelectric layer except a portion of the ferroelectric layer to be bonded to an upper electrode. A Si3N4 layer or a SiON layer(43) is formed as the second diffusion layer on the TiO2 layer. The upper electrode in contact with the ferroelectric layer is formed.