发明名称 ELECTRON BEAM EMISSION SOURCE, MANUFACTURING METHOD OF ELECTRON BEAM EMISSION SOURCE AND ELECTRON BEAM LITHOGRAPHY SYSTEM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an electron beam emission source with a smaller electron emission angle, having a structure easy to join a nanotube, to provide a manufacturing method of the electron beam emission source, and to provide an electron beam lithography system with a smaller electron beam diameter and capable of exposing a micropattern. <P>SOLUTION: The electron beam emission source has a protrusion 3 with a conductivity on a board 1, and part other than the tip part 3a is covered with an insulator 2, and a carbon nanotube 4 is jointed with the tip part 3a of the protrusion 3. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004158357(A) 申请公布日期 2004.06.03
申请号 JP20020324324 申请日期 2002.11.07
申请人 RICOH CO LTD 发明人 MASUZAWA MASAHIRO
分类号 H01J9/02;H01J1/304;H01J37/073;H01L21/027;(IPC1-7):H01J1/304 主分类号 H01J9/02
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