发明名称 Manganese alloy sputtering target and method for producing the same
摘要 A manganese alloy sputtering target characterized in that oxygen is 1000 ppm or less, sulfur is 200 ppm or less and a forged texture is provided, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that it is susceptible to cracking and has a low rupture strength. A manganese alloy sputtering target which can form a thin film exhibiting high characteristics and high corrosion resistance while suppressing generation of nodules or particles is thereby obtained.
申请公布号 US2004103750(A1) 申请公布日期 2004.06.03
申请号 US20030474451 申请日期 2003.10.07
申请人 NAKAMURA YUICHIRO 发明人 NAKAMURA YUICHIRO
分类号 C22F1/02;B21J5/02;B21J5/08;C22C5/02;C22C5/04;C22C22/00;C22F1/00;C22F1/16;C22F1/18;C23C14/34;G11B5/39;G11B5/65;G11B5/851;H01L43/12;(IPC1-7):C22B47/00 主分类号 C22F1/02
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