发明名称 LASER IRRADIATION DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE LASER IRRADIATION DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a laser irradiation device for continuous oscillation capable of efficiently and uniformly performing laser irradiation. <P>SOLUTION: In a laser irradiation device using a galvano mirror and an fθlens optical system, the energy change due to the transmittance of the fθlens is canceled to scan with laser beams while suppressing the energy variation given to a substrate. The energy of laser beams made incident on the lens in advance is controlled by combining the optical system changing a branching ratio of polarized light of the laser beams and the optical system dependent on the polarization direction of the laser beams, and is continuously changed according to the transmittance of the positions of the lens incident with laser beams. The occurrence of the energy variation of laser beams irradiated on the substrate can be prevented by controlling energy of laser beams so that the transmittance variation by the lens is canceled. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004158837(A) 申请公布日期 2004.06.03
申请号 JP20030345277 申请日期 2003.10.03
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 OISHI HIROMASA
分类号 G02B26/10;G02F1/1368;H01L21/20;H01L21/268;H01L21/336;H01L29/786;H01S3/00;(IPC1-7):H01L21/268;G02F1/136 主分类号 G02B26/10
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