| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method for forming a thin impurity dopeed layer whose characteristics are satisfactory on a silicon cover guide substrate or a semiconductor layer formed on the silicon cover guide substrate whose conductive type is the same as that of the silicon cover guide substrate, and for easily forming an ohmic electrode on the impurity doped layer. SOLUTION: The laser doping of impurity is carried out from the upper face of a first conductive 4H-SiC substrate or a first conductivity semiconductor layer formed on the first conductivity 4H-SiC substrate to form a second impurity doped layer, the heat treatment of the impurity doped layer is carried out at a temperature for improving the disturbed crystal structure due to the laser doping of impurity, a metallic thin film in a predetermined size is formed at a predetermined position on the impurity doped layer, and a laser is emitted from the upper face of the metallic thin film to form an ohmic electrode. COPYRIGHT: (C)2004,JPO |
