| 摘要 |
PROBLEM TO BE SOLVED: To provide a damascene structure that can improve the performance of an integrated circuit by maintaining the wiring resistance of microfabricated multilevel metallization at a low level and, at the same time, can improve the productivity of the multilevel metallization. SOLUTION: The electrically conductive damascene structure is formed by embedding copper 115 in a plug section 112 formed in an electrical insulation layer. The plug section 112 is composed of two-stage groove sections 112 and 113 connected to each other through a flat surface section and respectively having large and small cross sections. In the plug section 112, a copper barrier layer 122 is formed inward from the surfaces of the side face section constituting the internal wall and the flat surface section to a depth of 3-50 nm and, in addition, the copper 115 is embedded. COPYRIGHT: (C)2004,JPO
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