发明名称 Charge pump and voltage doubler using the same
摘要 A charge pump and a voltage doubler are provided. The charge pump minimizes the difference in voltage between the terminals of a MOS transistor by serially connecting PMOS and NMOS transistors inside the charge pump circuit. The charge pump is able to provide a higher voltage while avoiding a large voltage difference at the gate-source, gate-base and gate-drain interfaces.
申请公布号 US2004104761(A1) 申请公布日期 2004.06.03
申请号 US20030671273 申请日期 2003.09.24
申请人 YEN CHIN-HSIEN 发明人 YEN CHIN-HSIEN
分类号 H02M3/07;(IPC1-7):G05F3/02 主分类号 H02M3/07
代理机构 代理人
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