发明名称 |
Erasing method for p-channel NROM |
摘要 |
An erasing method for a p-channel nitride read only memory. The method is used for a p-channel nitride read only memory having charges stored in a charge-trapping layer. A positive voltage is applied to the control gate and a negative voltage to the drain; also, the source is floating and the n-well is grounded. The voltage difference between the positive voltage applied to the control gate and the negative voltage to the drain is sufficient to trigger a band-to-band induced hot electron injection to erase the p-channel nitride read only memory.
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申请公布号 |
US2004105313(A1) |
申请公布日期 |
2004.06.03 |
申请号 |
US20030712586 |
申请日期 |
2003.11.12 |
申请人 |
LIN HUNG-SUI;LAI HAN-CHAO;LU TAO-CHENG |
发明人 |
LIN HUNG-SUI;LAI HAN-CHAO;LU TAO-CHENG |
分类号 |
G11C16/14;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/14 |
代理机构 |
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地址 |
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