| 摘要 |
PURPOSE: A semiconductor memory device is provided to supply data stably and to reduce layout area by performing amplification using a minimum number of MOS transistors. CONSTITUTION: A memory cell(30) comprises NMOS transistors(NM31,NM32), and storage nodes(N31,N32) and NMOS transistors(NM33,NM34). An Y-decoder(40) comprises transmission gates(TRG41,TRG42). A precharge unit(50) precharges a bit line and an inverted bit line by an inverted equalization signal respectively. A sense amplifier unit(60) senses and amplifies a voltage difference between the bit line and the inverted bit line by a column selection signal.
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