发明名称 |
THIN FILM SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL DISPLAY, AND THEIR MANUFACTURING METHODS |
摘要 |
PROBLEM TO BE SOLVED: To improve the opening rate of a pixel of a thin film semiconductor device used as a driving substrate of an active matrix liquid crystal display. SOLUTION: A lower-side shading layer 5 is composed of a first conductive layer and at least its part is used for the gate wiring. The gate electrode G is composed of a second conductive different from the first conductive layer. The first conductive layer used for the gate wiring and the second conductive layer being as the gate electrode G are electrically connected in each pixel through a contact GCN each other. The upper-side shading layer 4 is composed of a third conductive layer kept at a constant potential. A supplementary capacitor 13 is formed over the first conductive layer, and its upper-side electrode 14 is electrically connected to a third conductive layer making up the upper-side shadow layer 4 through contacts CCN and MCN. COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004158881(A) |
申请公布日期 |
2004.06.03 |
申请号 |
JP20040028859 |
申请日期 |
2004.02.05 |
申请人 |
SONY CORP |
发明人 |
HASHIMOTO MAKOTO;SATO TAKUO |
分类号 |
G02F1/1343;G02F1/1368;H01L29/786;(IPC1-7):H01L29/786;G02F1/134;G02F1/136 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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