| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a copper damascene wiring in which each of wiring inter-layer films and a via inter-layer film is constituted of a SiOC film of a low dielectric constant. SOLUTION: Each of the wiring inter-layer films 15, 23 and the via inter-layer film 21 is constituted of the SiOC film and stopper insulating films 14, 22 and a cap insulating film 20 are constituted of a lamination film of a SiCN film A and a SiC film B, so that the leakage currents of the wiring inter-layer films 15, 23 and the via inter-layer film 21 are reduced and adhesiveness between the stopper insulating films 14, 22 and the cap insulating film 20 is improved. COPYRIGHT: (C)2004,JPO |
