发明名称 STENCIL MASK FOR ION IMPLANTATION
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a stencil mask for ion implantation in which the lifetime and durability can be enhanced at the thin film part. <P>SOLUTION: The stencil mask for ion implantation has a through hole pattern for ion implantation formed at a thin film part supported on a support wherein an ion absorbing layer is formed at least on the side (surface side) of the thin film part being irradiated with an ion beam. Since the ion absorbing layer is formed, lifetime and durability can be enhanced at the thin film part of the stencil mask for ion implantation. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004158527(A) 申请公布日期 2004.06.03
申请号 JP20020320872 申请日期 2002.11.05
申请人 HOYA CORP 发明人 AMAMIYA ISAO
分类号 G03F1/20;H01J37/305;H01L21/266;(IPC1-7):H01L21/266;G03F1/16 主分类号 G03F1/20
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