| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to change the profile of a nitride layer for securing an active region enough. CONSTITUTION: A pad oxide layer(21) and a nitride layer(22) are sequentially formed on a semiconductor substrate(20). The nitride layer is selectively patterned for obtaining the first tilt profile. An active region(A2) having the second tilt profile is defined by selectively carrying out an over-etching process on the pad oxide layer and the semiconductor substrate. Preferably, the nitride layer has a thickness of 400-1200 angstrom. Preferably, the nitride layer is patterned by carrying out a tilt etching process.
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